- 您现在的位置：买卖IC网 > Sheet目录526 > SUD50N04-09H-E3 (Vishay Siliconix)MOSFET N-CH D-S 40V TO252
SUD50N04-09H
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
40
3.4
5.0
± 100
V
nA
V DS = 40 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 40 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 40 V, V GS = 0 V, T J = 175 °C
150
On-State Drain Current a
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
50
0.0072
0.009
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 10 V, I D = 20 A, T J = 125 °C
0.014
Ω
V GS = 10 V, I D = 20 A, T J = 175 °C
0.018
Forward Transconductance a
g fs
V DS = 15 V, I D = 15 A
20
57
S
Dynamic
b
Input Capacitance
C iss
3700
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
Gate Resistance
C oss
C rss
Q g
Q gs
Q gd
R g
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 20 V, V GS = 10 V, I D = 50 A
340
175
55
19
13
1.3
85
pF
nC
Ω
Turn-On Delay Time
c
t d(on)
12
20
Rise Time c
Turn-Off Delay Time
c
t r
t d(off)
V DD = 20 V, R L = 0.4 Ω
I D ? 50 A, V GEN = 10 V, R g = 2.5 Ω
20
35
30
55
ns
Fall Time c
t f
11
20
Source-Drain Diode Ratings and Characteristics (T C = 25 °C) b
Continuous Current
Pulsed Current
I S
I SM
50
100
A
Forward Voltage a
Reverse Recovery Time
V SD
t rr
I F = 30 A, V GS = 0 V
I F = 30 A, di/dt = 100 A/μs
0.90
30
1.50
45
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72669
S-71661-Rev. E, 06-Aug-07
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SUD50N04-16P-E3
MOSFET N-CH D-S 40V TO252
SUD50N04-37P-T4-E3
MOSFET N-CH D-S 40V TO252
SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 50A TO-252
SUD50N06-07L-E3
MOSFET N-CH D-S 60V TO252
SUD50N06-08H-E3
MOSFET N-CH D-S 60V TO252
SUD50N06-09L-E3
MOSFET N-CH D-S 60V TO252
SUD50N10-18P-GE3
MOSFET N-CH 100V DPAK
SUD50N10-34P-T4-E3
MOSFET N-CH D-S 100V TO252
相关代理商/技术参数
SUD50N04-10P-E3
功能描述:MOSFET 40V 20A 53.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-16P
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 °C MOSFET
SUD50N04-16P-E3
功能描述:MOSFET 40V 20A 35.7W 16mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-25P
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 175°C MOSFET
SUD50N04-25P-E3
功能描述:MOSFET 40V 20A 28.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-37P
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
SUD50N04-37P-E3
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
SUD50N04-37P-T4-E3
功能描述:MOSFET 40V 8.0A 10.8W 37mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube